广东凌讯微电子有限公司
Guangdong Lingxun Microelectronics Co.,LTD
国家和地区： 中国
展位号： N4.160
公司简介： 广东凌讯微电子是一家专注功率半导体器件研发、封装测试、销售于一体的国家高新技术企业，工厂面积1万余平方米，公司现有人员180余人，每年为业界提供超600KK优质的功率半导体器件产品。
凌讯能够为客户提供高质量，高可靠性的功率器件产品及全方位的技术支持，现有肖特基、LowVF肖特基、快恢复、高压MOS、中低压MOS、超结MOS、IGBT单管及碳化硅二极管等主力产品线，广泛应用于各类电源适配器、汽车电子、智能家居、电机驱动、LED照明、锂电管理，逆变等领域。
凌讯致力于成为卓越的功率半导体器件制造商，助力功率半导体心器件国产化，珍惜来自客户、员工及合作伙伴的每一份信赖，更竭力为客户提供真诚热情的服务！
相关产品
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IGBT
Lingxun Microelectronics IGBT diodes Series:
IC @TC=100℃:40A
Vce:1200V
VCE(sat)-typ:1.9V
FEATURES:
• Trench and field-stop technology
• High speed switching
• Low collector to emitter saturation voltage
• Easy parallel switching capability
• High ruggedness performance
• RoHS compliant
APPLICATIONS
• Welding machines
• UPS
• Solar inverters了解详情
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超结MOS管
Lingxun Microelectronice super Junction Mosfet seriers:2A-100A/500V-800V
Representative part number：LC65R040/LC65R190/LC65R280/LC65R380/LC65R600/LC65R900 etc.
For LC65R190，ID:22A,VDSS:650V,RDSON:160mΩ
Adopt advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Applications:
• Solar inverters
• LCD/LED/PDP TV
• Telecom/Server Power supplies
• AC-DC Power Supply了解详情
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中低压MOS管
Lingxun M&L voltage MOSFET series
ID:-150A~300A,VDSS:-100V-200V
For LT200N03AG'
ID:200A VDSS:30V RDSON:1.6mΩ
FEATURES:
Adopt advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
APPLICATIONS
• Load switch
•PWM Application
•Power Management了解详情
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